Abstract
In this paper, the one-port and two-port measurement methods for millimeter wave Schottky diodes are developed, and the corresponding test structures are designed. The variation of cut-off frequency with parasitic resistance and zero bias intrinsic capacitance are analyzed. The equivalent circuit models of small signal and large signal are given. A commercial Schottky diode has been used to extract the small signal model parameters. The experimental results show that the S-parameters agree well under on and off bias condition.
| Translated title of the contribution | Millimeter wave Schottky diode characterization and on-wafer measurement |
|---|---|
| Original language | Chinese (Traditional) |
| Pages (from-to) | 856-862 |
| Number of pages | 7 |
| Journal | Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves |
| Volume | 41 |
| Issue number | 5 |
| DOIs | |
| State | Published - Oct 2022 |