Abstract
Compact and broadband millimeter-wave (MMW) single-pole-double-throw (SPDT) switches in GlobalFoundries 45nm SOI technology was presented. A full-band SPDT switch with series and shunt structure, and a Ka-band SPDT switch with two-stages shunt transistors were included in the design. Coplanar waveguide (CPW) series stubs were adopted to realize small reactance. In addition, negative body bias technology was utilized to enhance the performance of the switch over millimeter-wave band. The fabricated chip occupied a core area of 0.35 mm ×0.16 mm. Measurement results of the full-band SPDT switch show an insertion loss less than 4 dB and isolation better than 24 dB over DC~94 GHz. For the Ka-band SPDT switch, insertion loss is 2.5~3.2 dB and isolation is better than 19 dB over 25~45 GHz.
| Translated title of the contribution | Design of Ultra-broadband Millimeter-wave SPDT Switch Based on 45 nm SOI Technology |
|---|---|
| Original language | Chinese (Traditional) |
| Pages (from-to) | 262-267 and 273 |
| Journal | Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics |
| Volume | 38 |
| Issue number | 4 |
| State | Published - 25 Aug 2018 |