基于 90 nm InP HEMT 工艺的 220 GHz 功率放大器设计

Yan Chen; Fan Zhong Meng; Yuan Fang; Ao Zhang; Jian Jun Gao

doi:10.11972/j.issn.1001-9014.2022.06.013

基于 90 nm InP HEMT 工艺的 220 GHz 功率放大器设计

Translated title of the contribution: Design of 220 GHz power amplifier based on 90 nm InP HEMT process

Yan Chen, Fan Zhong Meng, Yuan Fang, Ao Zhang, Jian Jun Gao

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Based on the 90 nm InP HEMT process，a 220 GHz power amplifier terahertz integrated circuit design （TMIC）is designed. The amplifier adopts the on-chip Wilkinson power divider structure to realize the power synthesis of two-way five stage common-source amplifiers. The on-wafer measurement results show that the average small signal gain of the power amplifier is 18 dB. The power test results show that the saturated output power of the power amplifier is better than 15. 8 mW from 210 GHz to 230 GHz，with a maximum output power of 20. 9 mW at 223 GHz. The size of the TMIC chip is 2. 18 mm×2. 40 mm.

Translated title of the contribution	Design of 220 GHz power amplifier based on 90 nm InP HEMT process
Original language	Chinese (Traditional)
Pages (from-to)	1037-1041
Number of pages	5
Journal	Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves
Volume	41
Issue number	6
DOIs	https://doi.org/10.11972/j.issn.1001-9014.2022.06.013
State	Published - Dec 2022

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title = "基于 90 nm InP HEMT 工艺的 220 GHz 功率放大器设计",

abstract = "Based on the 90 nm InP HEMT process，a 220 GHz power amplifier terahertz integrated circuit design （TMIC）is designed. The amplifier adopts the on-chip Wilkinson power divider structure to realize the power synthesis of two-way five stage common-source amplifiers. The on-wafer measurement results show that the average small signal gain of the power amplifier is 18 dB. The power test results show that the saturated output power of the power amplifier is better than 15. 8 mW from 210 GHz to 230 GHz，with a maximum output power of 20. 9 mW at 223 GHz. The size of the TMIC chip is 2. 18 mm×2. 40 mm.",

keywords = "InP high electron mobility transistor（InP HEMT）, power amplifier（PA）, terahertz integrated circuit （TMIC）",

author = "Yan Chen and Meng, \{Fan Zhong\} and Yuan Fang and Ao Zhang and Gao, \{Jian Jun\}",

year = "2022",

month = dec,

doi = "10.11972/j.issn.1001-9014.2022.06.013",

language = "繁体中文",

volume = "41",

pages = "1037--1041",

journal = "Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves",

issn = "1001-9014",

publisher = "Chinese Optical Society",

number = "6",

}

TY - JOUR

T1 - 基于 90 nm InP HEMT 工艺的 220 GHz 功率放大器设计

AU - Chen, Yan

AU - Meng, Fan Zhong

AU - Fang, Yuan

AU - Zhang, Ao

AU - Gao, Jian Jun

PY - 2022/12

Y1 - 2022/12

N2 - Based on the 90 nm InP HEMT process，a 220 GHz power amplifier terahertz integrated circuit design （TMIC）is designed. The amplifier adopts the on-chip Wilkinson power divider structure to realize the power synthesis of two-way five stage common-source amplifiers. The on-wafer measurement results show that the average small signal gain of the power amplifier is 18 dB. The power test results show that the saturated output power of the power amplifier is better than 15. 8 mW from 210 GHz to 230 GHz，with a maximum output power of 20. 9 mW at 223 GHz. The size of the TMIC chip is 2. 18 mm×2. 40 mm.

AB - Based on the 90 nm InP HEMT process，a 220 GHz power amplifier terahertz integrated circuit design （TMIC）is designed. The amplifier adopts the on-chip Wilkinson power divider structure to realize the power synthesis of two-way five stage common-source amplifiers. The on-wafer measurement results show that the average small signal gain of the power amplifier is 18 dB. The power test results show that the saturated output power of the power amplifier is better than 15. 8 mW from 210 GHz to 230 GHz，with a maximum output power of 20. 9 mW at 223 GHz. The size of the TMIC chip is 2. 18 mm×2. 40 mm.

KW - InP high electron mobility transistor（InP HEMT）

KW - power amplifier（PA）

KW - terahertz integrated circuit （TMIC）

UR - https://www.scopus.com/pages/publications/85161381028

U2 - 10.11972/j.issn.1001-9014.2022.06.013

DO - 10.11972/j.issn.1001-9014.2022.06.013

M3 - 文章

AN - SCOPUS:85161381028

SN - 1001-9014

VL - 41

SP - 1037

EP - 1041

JO - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

JF - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

IS - 6

ER -

基于 90 nm InP HEMT 工艺的 220 GHz 功率放大器设计

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