基于平面肖特基二极管的 75~110 GHz 宽带三倍频器芯片

Translated title of the contribution: 75-110 GHz wideband frequency tripler chip based on planar schottky diode
  • Yan Chen
  • , Fan Zhong Meng
  • , Hao Dong Xue
  • , Ao Zhang*
  • , Jian Jun Gao
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Based on the GaAs planar Schottky diode process,a W band wideband frequency tripler MMIC is designed with a reverse parallel diode pair. By combining the finite element method and equivalent circuit method,an accurate equivalent circuit model of the planar Schottky diode is built in the frequency range of 10-280 GHz. The nonlinear harmonic balance tool is utilized to achieve the optimal frequency tripler design in the W band. The measurement results show that the frequency multiplication loss is less than 15 dB under 17 dBm driving power,and the efficiency up to 6. 7%. The chip size is 0. 80 mm×0. 65 mm×0.

Translated title of the contribution75-110 GHz wideband frequency tripler chip based on planar schottky diode
Original languageChinese (Traditional)
Pages (from-to)768-774
Number of pages7
JournalHongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves
Volume43
Issue number6
DOIs
StatePublished - Dec 2024

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