一种改进的基于 110GHz 在片 S 参数测试的 HEMT 器件寄生电阻提取方法

Zhi Chun Li; Yuan Ting Lyu; Ao Zhang; Jian Jun Gao

doi:10.11972/j.issn.1001-9014.2024.01.012

一种改进的基于 110GHz 在片 S 参数测试的 HEMT 器件寄生电阻提取方法

Translated title of the contribution: An improved method for determination of extrinsic resistances for HEMT devices based on 110 GHz S-parameters on-wafer measurement

Zhi Chun Li
, Yuan Ting Lyu
, Ao Zhang
, Jian Jun Gao^*

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

An improved method for determination of extrinsic resistances for 70 nm InP high electron mobility transistor（HEMT）is proposed in this paper. A set of expressions have been derived from the equivalent circuit model under operating bias points（V_gs > V_th，V_ds = 0 V）. The extrinsic resistances are iterative determined using the discrepancy between simulated and measured S-parameters as an optimization criterion using the semi-analyti⁃ cal method. Good agreement between simulated and measured S-parameters under multi bias over the frequency range up to 110 GHz verifies the effectiveness of this extraction method.

Translated title of the contribution	An improved method for determination of extrinsic resistances for HEMT devices based on 110 GHz S-parameters on-wafer measurement
Original language	Chinese (Traditional)
Pages (from-to)	85-90
Number of pages	6
Journal	Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves
Volume	43
Issue number	1
DOIs	https://doi.org/10.11972/j.issn.1001-9014.2024.01.012
State	Published - 2024

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title = "一种改进的基于 110GHz 在片 S 参数测试的 HEMT 器件寄生电阻提取方法",

abstract = "An improved method for determination of extrinsic resistances for 70 nm InP high electron mobility transistor（HEMT）is proposed in this paper. A set of expressions have been derived from the equivalent circuit model under operating bias points（Vgs > Vth，Vds = 0 V）. The extrinsic resistances are iterative determined using the discrepancy between simulated and measured S-parameters as an optimization criterion using the semi-analyti⁃ cal method. Good agreement between simulated and measured S-parameters under multi bias over the frequency range up to 110 GHz verifies the effectiveness of this extraction method.",

keywords = "InP high electron mobility transistor（HEMT）, equivalent circuit model, extrinsic resistances, modeling",

author = "Li, \{Zhi Chun\} and Lyu, \{Yuan Ting\} and Ao Zhang and Gao, \{Jian Jun\}",

year = "2024",

doi = "10.11972/j.issn.1001-9014.2024.01.012",

language = "繁体中文",

volume = "43",

pages = "85--90",

journal = "Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves",

issn = "1001-9014",

publisher = "Chinese Optical Society",

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T1 - 一种改进的基于 110GHz 在片 S 参数测试的 HEMT 器件寄生电阻提取方法

AU - Li, Zhi Chun

AU - Lyu, Yuan Ting

AU - Zhang, Ao

AU - Gao, Jian Jun

PY - 2024

Y1 - 2024

N2 - An improved method for determination of extrinsic resistances for 70 nm InP high electron mobility transistor（HEMT）is proposed in this paper. A set of expressions have been derived from the equivalent circuit model under operating bias points（Vgs > Vth，Vds = 0 V）. The extrinsic resistances are iterative determined using the discrepancy between simulated and measured S-parameters as an optimization criterion using the semi-analyti⁃ cal method. Good agreement between simulated and measured S-parameters under multi bias over the frequency range up to 110 GHz verifies the effectiveness of this extraction method.

AB - An improved method for determination of extrinsic resistances for 70 nm InP high electron mobility transistor（HEMT）is proposed in this paper. A set of expressions have been derived from the equivalent circuit model under operating bias points（Vgs > Vth，Vds = 0 V）. The extrinsic resistances are iterative determined using the discrepancy between simulated and measured S-parameters as an optimization criterion using the semi-analyti⁃ cal method. Good agreement between simulated and measured S-parameters under multi bias over the frequency range up to 110 GHz verifies the effectiveness of this extraction method.

KW - InP high electron mobility transistor（HEMT）

KW - equivalent circuit model

KW - extrinsic resistances

KW - modeling

UR - https://www.scopus.com/pages/publications/85184380774

U2 - 10.11972/j.issn.1001-9014.2024.01.012

DO - 10.11972/j.issn.1001-9014.2024.01.012

M3 - 文章

AN - SCOPUS:85184380774

SN - 1001-9014

VL - 43

SP - 85

EP - 90

JO - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

JF - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

IS - 1

ER -

一种改进的基于 110GHz 在片 S 参数测试的 HEMT 器件寄生电阻提取方法

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