TY - JOUR
T1 - γ-Irradiation Damage Mechanism of InGaAs/InP p–i–n Focal Plane Array Investigated by Spatially Resolved and Temperature-Dependent Photoluminescence
AU - Cai, Yisheng
AU - Zhu, Liangqing
AU - Wang, Le
AU - Shang, Liyan
AU - Li, Yawei
AU - Zhang, Jinzhong
AU - Jiang, Kai
AU - Hu, Zhigao
N1 - Publisher Copyright:
© 2023 Wiley-VCH GmbH.
PY - 2023/7
Y1 - 2023/7
N2 - InGaAs infrared photodetectors subjected to irradiation environments undergo microstructural modifications and concomitant degradation, yet the underlying microscopic mechanism has not been fully studied. Herein, the influence of γ irradiation (total dose of 20 krad(Si)) on an In0.53Ga0.47 As/InP p–i–n focal plane array is studied by spatially resolved and temperature-dependent (3–290 K) photoluminescence (PL) measurements. By comparative PL studies of pre-irradiation and post-irradiation, the spatially resolved PL results of irradiation indicate that the in-plane uniformity of all PL features presents bigger fluctuations, meanwhile, the results of temperature-dependence PL demonstrate that the PL integral intensity related to impurities and interface-bound states is significantly weakened after irradiation. This can be attributed to the enhanced migration and reaction of defects caused by γ irradiation. Some mobile defects tend to migrate to lower energy regions, such as interfaces, and form defect complexes. In addition, some impurities combine with mobile defects and form inactive impurity–defect complexes. The findings reveal the effects of low-dose γ irradiation on InGaAs devices and may provide useful information for enhancing radiation resistance.
AB - InGaAs infrared photodetectors subjected to irradiation environments undergo microstructural modifications and concomitant degradation, yet the underlying microscopic mechanism has not been fully studied. Herein, the influence of γ irradiation (total dose of 20 krad(Si)) on an In0.53Ga0.47 As/InP p–i–n focal plane array is studied by spatially resolved and temperature-dependent (3–290 K) photoluminescence (PL) measurements. By comparative PL studies of pre-irradiation and post-irradiation, the spatially resolved PL results of irradiation indicate that the in-plane uniformity of all PL features presents bigger fluctuations, meanwhile, the results of temperature-dependence PL demonstrate that the PL integral intensity related to impurities and interface-bound states is significantly weakened after irradiation. This can be attributed to the enhanced migration and reaction of defects caused by γ irradiation. Some mobile defects tend to migrate to lower energy regions, such as interfaces, and form defect complexes. In addition, some impurities combine with mobile defects and form inactive impurity–defect complexes. The findings reveal the effects of low-dose γ irradiation on InGaAs devices and may provide useful information for enhancing radiation resistance.
KW - InGaAs infrared photodetector
KW - irradiation damage mechanism
KW - photoluminescence
KW - γ irradiation
UR - https://www.scopus.com/pages/publications/85159667812
U2 - 10.1002/pssb.202200546
DO - 10.1002/pssb.202200546
M3 - 文章
AN - SCOPUS:85159667812
SN - 0370-1972
VL - 260
JO - Physica Status Solidi (B): Basic Research
JF - Physica Status Solidi (B): Basic Research
IS - 7
M1 - 2200546
ER -